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Quantum computers based on rare-earth-ion-doped crystals show promising properties in terms of scalability and connectivity if single ions can be used as qubits. Through simulations, we investigate gate operations on such qubits and discuss…
Transport measurements were made on four-terminal devices fabricated from InSb/Al_xIn_(1-x)Sb quantum well structures at temperatures from 1.5 to 300K. Negative bend resistance, which is characteristic of ballistic transport, was observed…
Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing (Vside). The subthreshold slope (SS) and drain…
Current quantum programs are mostly synthesized and compiled on the gate-level, where quantum circuits are composed of quantum gates. The gate-level workflow, however, introduces significant redundancy when quantum gates are eventually…
Superconducting transmon qubits are a promising platform for quantum computation, yet they face significant fidelity degradation due to connectivity noise, particularly in the intermediate coupling regime where noise levels are substantial.…
Ultra-thin-body (UTB) channel materials of a few nanometers in thickness are currently considered as candidates for future electronic, thermoelectric, and optoelectronic applications. Among the features that they possess, which make them…
Electrical signaling via voltage-gated ion channels depends upon the function of a voltage sensor (VS), identified with the S1-S4 domain in voltage-gated K+ channels. Here we investigate some energetic aspects of the sliding-helix model of…
A high vacuum gate valve for skimmed molecular beam experiments is described. It is designed with a very short extent of only 10 mm along the molecular beam axis to minimize the distance between the molecular beam source and the experiment…
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device…
To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and…
We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined,…
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range 7-17 nm. The devices were fabricated on silicon-on-insulator wafers utilizing wafer bonding,…
A key requirement to perform simulations of large quantum systems on near-term quantum hardware is the design of quantum algorithms with short circuit depth that finish within the available coherence time. A way to stay within the limits of…
While the accuracy of qubit operations has been greatly improved in the last decade, further development is demanded to achieve the ultimate goal: a fault-tolerant quantum computer that can solve real-world problems more efficiently than…
Successful implementation of a fault-tolerant quantum computation on a system of qubits places severe demands on the hardware used to control the many-qubit state. It is known that an accuracy threshold $P_{a}$ exists for any quantum gate…
High-fidelity quantum gate operations are essential for achieving scalable quantum circuits. In spin qubit quantum computing systems, metallic gates and antennas which are necessary for qubit operation, initialization, and readout, also…
Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low…
We investigate the formation and transport of gas bubbles across a model porous catalyst/electrode using lattice Boltzmann simulations. This approach enables us to systematically examine the influence of a wide range of morphologies, flow…
In recent years simulations of chemistry and condensed materials has emerged as one of the preeminent applications of quantum computing, offering an exponential speedup for the solution of the electronic structure for certain strongly…
We analyze in detail the so-called "pushing gate" for trapped ions, introducing a time dependent harmonic approximation for the external motion. We show how to extract the average fidelity for the gate from the resulting semi-classical…