Related papers: III-V Tri-Gate Quantum Well MOSFET: Quantum Ballis…
Fault-tolerant quantum computing demands many qubits with long lifetimes to conduct accurate quantum gate operations. However, external noise limits the computing time of physical qubits. Quantum error correction codes may extend such…
The development of noisy intermediate-scale quantum (NISQ) devices has extended the scope of executable quantum circuits with high-fidelity single- and two-qubit gates. Equipping NISQ devices with three-qubit gates will enable the…
Quantum computers are inherently affected by noise. While in the long-term error correction codes will account for noise at the cost of increasing physical qubits, in the near-term the performance of any quantum algorithm should be tested…
In this paper, we conduct a comprehensively analyze the influence of different quantum noise gates, including Phase Flip, Bit Flip, Phase Damping, Amplitude Damping, and the Depolarizing Channel, on the performance of HyQNNs. Our results…
In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT) power MOSFET with three sections in the trench gate (an N+ poly gate sandwiched between two P+ poly gates) and having different gate oxide thicknesses (increasing…
The transport of atoms is experimentally studied in a transistor-like triple-well potential consisting of a narrow gate well surrounded by source and drain wells. Atoms are initially loaded into the source well with pre-determined…
Scaling up quantum computing hardware is hindered by the narrow operating margins of current quantum components. Here, we introduce a composite qubit and gate scheme that achieves wide margins by use of transistor-like nonlinearities to…
Quantum process tomography of each directly implementable quantum gate used in the IBM quantum processors is performed to compute gate error in order to check viability of complex quantum operations in the superconductivity-based quantum…
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…
In this paper, we propose a simulation-based novel Split-Gate Trench MOSFET structure with an optimized fabrication process to enhance power efficiency, switching speed, and thermal stability for high-performance semiconductor applications.…
The design of scalable quantum computers will benefit from predictive models for qubit performance that consider the design and layout of the qubit devices. This approach, has recently been adopted for superconducting qubits, but has…
Quantum algorithms have been proposed to accelerate the simulation of the chaotic dynamical systems that are ubiquitous in the physics of plasmas. Quantum computers without error correction might even use noise to their advantage to…
Experiments to explore the predicted consequences on the I-V characteristics of a Langmuir probe based on the fluid approach for electrons and the electron Bohm criterion are conducted and their results are presented. The predictions on the…
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF…
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts.…
We report on resistivity and Hall measurements performed on a series of narrow mesa devices fabricated from LaAlO_3/SrTiO_3 single interface heterostructure with a bridge width range of 1.5-10 microns. Upon applying back-gate voltage of the…
We study the implementation of quantum channels with quantum computers while minimizing the experimental cost, measured in terms of the number of Controlled-NOT (C-NOT) gates required (single-qubit gates are free). We consider three…
Extended Floating Gate Field Effect Transistors (EGFETs) are CMOS-compatible floating gate devices capable of detecting charges on their sensing area by the relative shifts in current-voltage (I-V) characteristics. The I-V shifts are…
High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is…