English

Electron bunching in triple quantum dot interferometers

Mesoscale and Nanoscale Physics 2011-01-11 v2

Abstract

We study electron transport through a triple quantum dot in ring configuration at finite bias. In particular, we analyze the influence of a gate voltage that detunes one of the dots, such that one branch of the interferometer becomes off-resonant. It turns out that then interference effects fade away, i.e., the current becomes independent of a penetrating flux and the detuning. The noise properties which are characterized by the full-counting statistics, however, are governed by bunching effects that may be tuned by the gate voltage. Analytical results for limiting cases support this picture. A possible application is the construction of current sources with widely tunable shot noise properties.

Keywords

Cite

@article{arxiv.1002.3252,
  title  = {Electron bunching in triple quantum dot interferometers},
  author = {Fernando Domínguez and Gloria Platero and Sigmund Kohler},
  journal= {arXiv preprint arXiv:1002.3252},
  year   = {2011}
}

Comments

8 pages, 5 figures

R2 v1 2026-06-21T14:47:52.826Z