Related papers: Sensitivity Challenge of Steep Transistors
We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope…
Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced…
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…
In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage,…
The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi…
Dual-phase liquid-xenon time projection chambers (LXe TPCs) deploying a few tonnes of liquid are presently leading the search for WIMP dark matter. Scaling these detectors to 10-fold larger fiducial masses, while improving their sensitivity…
Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in…
GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing and large ON-state current ($I_{\rm{ON}}$). However, at…
The development of thin film transistor (TFTs) based integrated circuits on flexible substrates promise interesting approaches to human interface systems. Recently TFTs have been fabricated on textured surfaces such as textiles, paper,…
Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority…
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
This work demonstrates a novel energy-efficient tunnel FET (TFET)-CMOS hybrid foundry platform for ultralow-power AIoT applications. By utilizing the proposed monolithic integration process, the novel complementary n and p-type Si TFET…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few…
Major challenges of micro thermal machines are the thermal insulation and mechanical tolerance in the case of sliding piston. Switching from piston to membrane in microengines can alleviate the latest and lead to planar architectures.…
Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different…
We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying…
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…
The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…