Related papers: Sensitivity Challenge of Steep Transistors
Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus…
Molecular junctions and similar devices described by an energy dependent transmission coefficient can have a high linear response thermoelectric figure of merit. Since such devices are inherently non-linear, the full thermodynamic…
Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This…
In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the concept of equivalent oxide thickness (EOT) is not applicable…
Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional…
This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier…
Two dimensional (2D) crystal heterostructures are shown to possess a unique opportunity for novel THz nonlinear devices. In contrast to the oxide tunneling barrier, the uniformity of 2D insulators in the thickness control provides an ideal…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
Extended Floating Gate Field Effect Transistors (EGFETs) are CMOS-compatible floating gate devices capable of detecting charges on their sensing area by the relative shifts in current-voltage (I-V) characteristics. The I-V shifts are…
We report on an optimized micro-machined thermal flow-rate sensor as part of an autonomous multi-parameter sensing device for water network monitoring. The sensor has been optimized under the following constraints: low power consumption and…
This paper describes a CMOS analogy voltage supper buffer designed to have extremely low static current Consumption as well as high current drive capability. A new technique is used to reduce the leakage power of class-AB CMOS buffer…
Realizing a quantum transistor built of molecules or quantum dots has been one of the most ambitious challenges in nanotechnology. Even though remarkable progress has been made, being able to gate and control nanometer scale objects, as…
Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions…
In this paper, we take a fresh look at the physics and operation of Negative Capacitance FETs, and provide unambiguous feedback to the device designers by examining NC-FETs' design space for sub-60 mV/dec Subthreshold Swing (SS).…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
Transistor-level simulation plays a vital role in validating the physical correctness of integrated circuits. However, such simulations are computationally expensive. This paper proposes three novel reduction methods specifically tailored…
Scanning tunneling spectroscopy (STS) has yielded significant insight on the electronic structure of graphene and other two-dimensional (2D) materials. STS directly measures a fundamental and directly calculable quantity: the single…
2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin…
The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…
Transition-edge sensor (TES) is a highly sensitive device that is capable of detecting extremely low levels of energy. It is characterised by low noise performance and high energy resolution. A mature method for reading out TES signal is…