Related papers: Sensitivity Challenge of Steep Transistors
Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator…
Different terrestrial terahertz applications would benefit from large-format arrays, operating in compact and inexpensive cryocoolers at liquid helium temperature with sensitivity, limited by the 300-K background radiation only. A…
The thermal management have been widely focused due to broad applications. Generally, the deformation can largely tune the thermal transport. The main challenge of flexible electronics/ materials is to maintain thermal conductance under…
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…
This research work focuses on the design of a high-resolution fast Fourier transform (FFT) /inverse fast Fourier transform (IFFT) processors for constraints analysis purpose. Amongst the major setbacks associated with such high resolution,…
Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room…
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of…
Scalability in the fabrication and operation of quantum computers is key to move beyond the NISQ era. So far, superconducting transmon qubits based on aluminum Josephson tunnel junctions have demonstrated the most advanced results, though…
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…
Transformers have become a standard neural network architecture for many NLP problems, motivating theoretical analysis of their power in terms of formal languages. Recent work has shown that transformers with hard attention are quite…
In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language…
Decoherence in superconducting qubits is dominated by defects that reside at amorphous interfaces. Interaction with discrete defects results in dropouts that complicate qubit operation and lead to nongaussian tails in the distribution of…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with…
Superconducting qubits are a leading platform for scalable quantum computing and quantum error correction. One feature of this platform is the ability to perform projective measurements orders of magnitude more quickly than qubit…
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…
We present a compact model for Tunnel Field Effect Transistors (TFET), that captures sev- eral non-idealities such as the Trap Assisted Tunneling (TAT) originating from interface traps (Dit), along with Verilog-A implementation. We show…
The smart transformer (ST) implemented using power electronics converters, has the capability of independent voltage control and reactive power isolation between its primary and secondary terminals. This capability provides a flexibility in…
This study maps the quantum landscape of superconducting diodes (SDs) \cite{nadeem23} onto the quantum technology architecture, which is currently constrained by fundamental challenges in control and scalability. In the existing…