Related papers: Polarization-Engineered InGaN/GaN Heterojunctions …
Hybrid conjugated polymer/fullerene filaments based on MEH-PPV/PVP/PCBM are prepared by electrospinning, and their properties assessed by scanning electron, atomic and lateral force, tunnelling, and confocal microscopy, as well as by…
Photoelectrochemical photodetectors (PEC-PDs) are promising owing to their simple, low-cost fabrication, self-powered operation, high photoresponse, and environmental sensitivity. In this work, we report for the first time the self-powered…
Recent studies suggest that piezoelectric polarization can play an important role in determining the electronic and optical properties of nanoscale nitride heterostructures. Among a few models available, recent first-principles calculations…
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in nonpolar, semipolar and polar crystal regions. All three quantum dot…
An isolated single-junction solar cell's temperature in outer space depends only on its radiation exchange with its environment. We consider a cell with zero emissivity below its bandgap and unity above it -- an idealization so far…
Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, considering realistic semiconductor system parameters is analyzed. An expression for the collection…
We demonstrate four and two-terminal perovskite-perovskite tandem solar cells with ideally matched bandgaps. We develop an infrared absorbing 1.2eV bandgap perovskite, $FA_{0.75}Cs_{0.25}Sn_{0.5}Pb_{0.5}I_3$, that can deliver 14.8 %…
We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion,…
This study investigates a four-terminal mechanically stacked double junction photovoltaic device based on GaAs as a top subcell and Si as a bottom subcell. Unlike two terminal monolithically series connected double junction photovoltaics,…
We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with…
Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, efficient doping in UWBG materials is typically limited to…
We propose a solar thermal energy conversion system consisting of a solar absorber, a thermoradiative cell or negative illumination photodiode, and a photovoltaic cell. Because it is a heat engine, this system can also be paired with…
Transition metal dichalcogenides (TMDs) and other van der Waals (vdW) semiconductors enable transfer-printed, lattice-mismatch-free stacking of many photovoltaic junctions, motivating a re-examination of multijunction detailed-balance…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
Using a pair of p- and n-type semiconductors separated by a nanoscale vacuum gap, we introduce an optoelectronics element prototype, "photonic p-n junction", as an analogue of the electronic p-n junction, which is demonstrated to serve as…
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN…
Thin-film solar cells with CuIn$_x$Ga$_{1-x}$Se$_2$ (CIGS) absorber are still far below their efficiency limit, although lab cells reach already 19.9%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
The hybrid metal-dielectric nanostructures (HMDN) are promising candidates to address the ohmic loss by conventional nanostructures in photovoltaic applications by strong confinement and high scattering directivity. In this study, we…
While various nanophotonic structures applicable to relatively thin crystalline silicon-based solar cells were proposed to ensure effective light in-coupling and light trapping in the absorber, it is of great importance to evaluate their…