Related papers: Polarization-Engineered InGaN/GaN Heterojunctions …
An optoelectronic optimization was carried out for an AlGaAs solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts.…
Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deploying midwave-infrared (MWIR) TPV in practical applications…
Polymer solar cells are considered as very promising candidates for development of photovoltaics of the future. They are cheap and easy to fabricate, however, up to now, they possess fundamental drawback, low effectiveness. In the most…
A numerical method based on the transfer matrix technique is developed to calculate the luminescence spectra of complex layered structures with photon recycling. Using this method we show a strong dependence of the emission spectra on the…
We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by…
Solar modules are currently characterized at standard test conditions (STC), defined at 1000W/m2 and 25 {\deg}C. However, solar modules in actual outdoor operating conditions typically operate at lower illumination and higher temperature…
This study explores the impact of an optimized amorphous silicon (a-Si) buffer layer on AlxIn1-xN-on-Si(100) heterojunction solar cells, with Al content varying from 0% (InN) to 55%. The buffer layer improves the structural quality of the…
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a…
We propose a new concept for the design of high-efficiency photocells based on ultra-thin (submicron) semiconductor films of controlled thickness. Using a microscopic model of a thin dielectric layer interacting with incident…
We present a photonic structure where Mie, Tamm, and surface plasmon optical modes can be tailored to enhance the brightness of an embedded single-photon emitter. Contrary to most proposals, the structure is designed for excitation and…
Carbon materials are excellent candidates for photovoltaic solar cells: they are Earth-abundant, possess high optical absorption, and superior thermal and photostability. Here we report on solar cells with active layers made solely of…
We report the first empirical efficiency measurement of germanium-based thermophotovoltaic devices under high-temperature, high-irradiance conditions using a high view-factor calorimetric setup. Two TPV cell architectures were fabricated on…
Hybridization of multi-junction concentrator photovoltaics with single-junction flat plate solar cells (CPV/PV) can deliver the highest power output per module area of any PV technology. Conversion efficiencies up to 34.2% have been…
The performance of organometallic perovskite solar cells has rapidly surpassed that of both conventional dye-sensitised and organic photovoltaics. High power conversion efficiency can be realised in both mesoporous and thin-film device…
III-V materials show a wide range of gaps making them ideal for the design of high efficiency solar cells. This chapter reviews relevant growth methods and material properties of these materials and discusses methods of combining…
The thermophotovoltaic cells which can convert the infrared radiation from room-temperature surroundings into electricity are of significance due to their potential applications in many fields. In this work, narrow bandgap Bi2Te3/Sb2Te3…
Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al0.20Ga0.80InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the…
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we…
Perovskite semiconductors have demonstrated outstanding external luminescence quantum yields, enabling high power conversion efficiencies (PCE). However, the precise conditions to advance to an efficiency regime above monocrystalline…
We report on resonant optical spectroscopy of self-assembled InGaAs quantum dots in which the number of electrons can accurately be tuned to N=0,1,2 by an external gate voltage. Polarization, wave vector and magnetic field dependent…