Related papers: Polarization-Engineered InGaN/GaN Heterojunctions …
A comprehensive first-principles study of the energetics, electronic and magnetic properties of Co-doped GaN(0001) thin films are presented and the effect of surface structure on the magnetic coupling between Co atoms is demonstrated. It is…
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V…
The physics of organic bulk heterojunction solar cells is studied within a six state model, which is used to analyze the factors that affect current-voltage characteristics, power-voltage properties and efficiency, and their dependence on…
The photovoltaic effect is one of the fundamental light-matter interactions in light energy harvesting. In conventional photovoltaic solar cells, the photogenerated charge carriers are extracted by the built-in electric field of a PN…
Solar energy conversion to produce electricity using photovoltaics is an emerging area in alternative energy research. Herein, we report on the basis of density functional calculations, phosphorene/AsP heterostructure could be a promising…
Optical nonlinearity plays a pivotal role in quantum information processing using photons, from heralded single-photon sources, coherent wavelength conversion to long-sought quantum repeaters. Despite the availability of strong dipole…
The search for highly effective and environmentally safe photocatalysts for water splitting and photovoltaic solar cells is essential for renewable solar energy conversion and storage. Based on first principles calculations, we show that…
The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is…
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room…
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here,…
We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single…
This paper presents the design, fabrication, and experimental characterization of monolithically integrated p-n junction InGaN/GaN multiple quantum well diodes (MQWDs) and suspended waveguides. Suspended MQWDs can be used as transmitters…
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer…
The material class of hybrid organic-inorganic perovskites has risen rapidly from a virtually unknown material in photovoltaic applications a short 7 years ago into a ~20% efficient thin-film solar cell material. As promising as this class…
The advanced multijunction solar cell (MJSC) has emerged as a frontrunner in photovoltaic literature due to its superior photoconversion efficiency (PCE) owing to its complex fabrication procedure and high costs. This article aims to…
We investigated the electronic and optoelectronic properties of vertical van der Waals heterostructure photodetectors using layered p type GaSe and n type InSe, with graphene as the transparent electrodes. Not only the photocurrent peaks…
We suggest a novel source of polarization-entangled photon pairs based on a cross-shaped plasmonic nanoantenna driven by a single quantum dot. The integration of the nanoantenna with a metal mirror overcomes the fundamental tradeoff between…
Near-field thermophotovoltaic systems functioning at 400$\sim$900~K based on graphene-hexagonal-boron-nitride heterostructures and thin-film InSb $p$-$n$ junctions are investigated theoretically. The performances of two near-field systems…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
With photoelectrochemical water splitting being one of the most promising approaches for clean energy production and storage, the search for efficient photoelectrode materials is greater than ever. Gallium phosphide (GaP) is a…