Related papers: Polarization-Engineered InGaN/GaN Heterojunctions …
N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with…
The prospects of scaling current photovoltaic technologies to terawatt levels remain uncertain. All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical…
In this work, we report optical and photovoltaic properties of ZnO based solid polymeric photoelectrochemical (PEC) cell. In this device construction, film of ZnO nanoparticle (NP) has been sandwiched between ITO and LiClO4-PEO solid…
We report polarization-sensitive solar-blind metal-semiconductor-metal UV photodetectors based on (11-20) a-plane AlGaN. The epilayer shows anisotropic optical properties confirmed by polarization-resolved transmission and photocurrent…
High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m-1K-1) cooling substrates into the wide-bandgap semiconductor of…
We demonstrate a novel type of solar cell, one that uses fixed negative charges, formed at the interface of n-Si with Al2O3, to generate strong inversion at the Si surface by electrostatic repulsion. Built-in voltages of up to 755 mV are…
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal-semiconductor-metal (MSM) photodetectors designed for ultraviolet (UV) applications. The proposed device architecture incorporates a…
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of…
The optical properties of nanofluids are peculiar and interesting for a variety of applications. Among them, the high light extinction coefficient of nanofluids can be useful in linear parabolic concentrating solar systems, while their…
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally…
For many years the faith of organic photovoltaics has been linked to the one of fullerene, since fullerene has been considered the electron-acceptor of choice in bulk heterojunctions solar cells. In the last years, the number of molecules…
Solar photons possessing energy less than the band-gap of a single-junction solar cell can be utilized via the up-conversion (UC) of two or more photons, resulting in the emission of a single above-bandgap photon. Due to the non-linear…
Tellurium allows attaining heavy n-type doping levels in GaAs, which is suited to achieve very low contact resistivities in solar cells. Besides, it modifies the energy bandgap of MOVPE-grown GaInP by reducing the group-III sublattice…
As single junction thin-film technologies, both Si heterojunction (HIT) and Perovskite based solar cells promise high efficiencies at low cost. One expects that a tandem cell design with these cells connected in series will improve the…
Organic/inorganic donor-acceptor interfaces are gaining growing attention in organic photovoltaic applications as each component of the interface offers unique attributes. Here we use hybrid-density functional theory to examine the…
The realization of ultra-compact passive silicon photonic devices is becoming more and more important for the future large-scale photonic integration as desired for many systems. Although some compact silicon photonic devices have been…
Electric coupling between subcells of a monolithically grown multijunction solar cell in short circuit allows their simultaneous and independent characterization by means of photo- and electroreflectance. The photovoltage generated by…
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from…
Nonlinear optics plays an important role in many areas of science and technology. The advance of nonlinear optics is empowered by the discovery and utilization of materials with growing optical nonlinearity. Here we demonstrate an indium…
Nanowire devices have long been proposed as an efficient alternative to their planar counterparts for different optoelectronic applications. Unfortunately, challenges related to the growth and characterization of doping and p-n junction…