Related papers: Temperature dependence of interlayer coupling in p…
Magnetic tunnel junctions with the layer sequence Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to…
We report the temperature dependence of the effective spin-mixing conductance between a normal metal (aluminium, Al) and a magnetic insulator ($\text{Y}_3\text{Fe}_5\text{O}_{12}$, YIG). Non-local spin valve devices, using Al as the spin…
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling…
We use a previously proposed theory for the temperature dependence of tunneling magnetoresistance to shed light on ongoing efforts to optimize spin valves. First we show that a mechanism in which spin valve performance at finite…
Recent experiments on van der Waals antiferrmagnets such as CrI3, CrCl3 and MnPS3 have shown that using atomically thin layers as tunnel barriers and measuring the temperature ($T$) and magnetic field ($H$) dependence of the conductance…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
The influence of temperature on the magnetic-field-driven domain wall (DW) motion is investigated in GdFeCo ferrimagnets with perpendicular magnetic anisotropy (PMA). We find that the depinning field strongly depends on temperature.…
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of…
We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co/Ni spin valves at ambient temperatures is typically marked…
We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and…
We theoretically investigate the interlayer magnetoresistance in quasi-two-dimensional Dirac fermion systems, where the Fermi energy is at the Dirac point. If there is an intermediate insulating layer that has an overlap with the wave…
To test the quality of a tunnel junction, one sometimes fits the bias-dependent differential conductance to a theoretical model, such as Simmons's formula. Recent experimental work by {\AA}kerman and collaborators, however, has demonstrated…
Poisson statistics predicts that the shot noise in a tunnel junction has a temperature independent third cumulant e^2\I, determined solely by the mean current I. Experimental data, however, show a puzzling temperature dependence. We…
Based on the experimental observation, that only the close vicinity of a magnetic impurity at metal surfaces determines its Kondo behaviour, we introduce a simple model which explains the Kondo temperatures observed for cobalt adatoms at…
We report a novel feature of the temperature induced magnetization jump observed along the a-axis of the GdVO3 single crystal at temperature TM = 0.8 K. Below TM, the compound shows no coercivity and remanent magnetization indicating a…
The dependence of tunneling conductance and tunneling magnetoresistance (TMR) on barrier thickness in magnetic tunnel junctions is theoretically investigated. The complex band structure of the insulator is taken into account, and an…
GdMnO$_3$ shows an incommensurate antiferromagnetic order below $\simeq 42$ K, transforms into a canted A-type antiferromagnet below $\simeq 20$ K, and for finite magnetic fields along the b axis ferroelectric order occurs below $\simeq 12$…
We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode…
The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different…