Tunable temperature induced magnetization jump in a GdVO3 single crystal

L D Tung

doi:10.1103/PhysRevB.73.024428

Tunable temperature induced magnetization jump in a GdVO3 single crystal

Strongly Correlated Electrons 2009-11-11 v1 Materials Science

Authors: L D Tung

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Abstract

We report a novel feature of the temperature induced magnetization jump observed along the a-axis of the GdVO3 single crystal at temperature TM = 0.8 K. Below TM, the compound shows no coercivity and remanent magnetization indicating a homogenous antiferromagnetic structure. However, we will demonstrate that the magnetic state below TM is indeed history dependent and it shows up in different jumps in the magnetization only when warming the sample through TM. Such a magnetic memory effect is highly unusual and suggesting different domain arrangements in the supposedly homogenous antiferromagnetic phase of the compound.

Keywords

magnetization magnetic structure magnetic materials and spin systems

Cite

@article{arxiv.cond-mat/0601066,
  title  = {Tunable temperature induced magnetization jump in a GdVO3 single crystal},
  author = {L D Tung},
  journal= {arXiv preprint arXiv:cond-mat/0601066},
  year   = {2009}
}

Comments

17 pages, 8 Figures

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