Related papers: Temperature dependence of interlayer coupling in p…
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed,…
We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and…
We consider the impact of electron-electron interactions on the temperature dependence of the anomalous Hall effect in disordered conductors. The microscopic analysis is carried out within the diagrammatic approach of the linear response…
We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a…
We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni/octanethiol/Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the…
Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in…
We study the influence of collective magnetic excitations on the interlayer exchange coupling (IEC) in metallic multilayers. The results are compared to other models that explain the temperature dependence of the IEC by mechanisms within…
We consider interaction effects in a granular normal metal at not very low temperatures. Assuming that all weak localization effects are suppressed by the temperature we replace the initial Hamiltonian by a proper functional of phases and…
We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450oC, which is approaching the theoretically…
The unexpected finding of a strong magnetic field dependence of the dielectric properties of insulating glasses at very low temperatures has been a puzzling problem since its discovery. Several attempts have been made to explain this…
The resistivity, magnetoresistance and in-field heat capacity measurements were performed on GdPt$_{2}$ intermetallic compound. The magnetocaloric parameters $\Delta T_{ad}$ and $-\Delta S$ were derived from the in-field heat capacity data.…
Recent experiments have studied the tunneling current between the edges of a fractional quantum Hall liquid as a function of temperature and voltage. The results of the experiment are puzzling because at "high" temperature (600-900 mK) the…
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…
We have investigated the effect of thermal fluctuation on the interlayer coupling of three-dimensional Josephson-junction arrays with anisotropic interactions as a model of layered high-$T_c$ oxides, focusing on non-Ohmic current-voltage…
Understanding how the mechanism of charge transport through molecular tunnel junctions depends on temperature is crucial to control electronic function in molecular electronic devices. With just a few systems investigated as a function of…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel…
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…
We study the dependence of the Kondo temperature on the gate voltage in a strongly blockaded quantum dot with a small single-particle level spacing. We show that the dependence cannot be fitted to that of the Anderson impurity model with…
The current-voltage characteristics of Au/InOx/Pb tunnel junctions exhibit peculiar zero-bias anomalies. At low temperature the zero-bias resistance attains values that are smaller than the normal state resistance by a factor that often…