Related papers: Temperature dependence of interlayer coupling in p…
Exchange coupling between two magnetic layers through an interlayer is of broad interest for numerous recent applications of nano-magnetic systems. In this Letter we study ferromagnetic exchange coupling through amorphous paramagnetic Fe-Ta…
In the layered quantum spin systems TiOCl and TiOBr the magnetic susceptibility shows a very weak temperature dependence at high temperatures and transition-induced phenomena at low temperatures. There is a clear connection of the observed…
Using a quantum theory including spin-splitting effect in diluted magnetic semiconductors, we study the dependence of tunneling magnetoresistance (TMR) on barrier thickness, temperature and applied voltage in GaMnAs/GaAs/GaMnAs…
We demonstrate coupling between the motions of two independently trapped ions with a separation distance of 620 $\mu$m. The ion-ion interaction is enhanced via a room-temperature electrically floating metallic wire which connects two…
The Axial Magnetic Effect is the generation of an equilibrium dissipationless energy flow of chiral fermions in the direction of the axial (chiral) magnetic field. At finite temperature the dissipationless energy transfer may be realized in…
We have studied the underlayer thickness and temperature dependences of the current induced effective field in CoFeB|MgO heterostructures with Ta based underlayers. The underlayer thickness at which the effective field saturates is found to…
Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La$_{0.67}$Sr$_{0.33}$MnO$_3$% -SrTiO$_3$-La$_{0.67}$ Sr$_{0.33}$MnO$_3$ trilayer device supporting…
The thermal spin-transfer torque (TSTT) is an effect to switch the magnetic free layer in a magnetic tunnel junction by a temperature gradient only. We present ab initio calculations of the TSTT. In particular, we discuss the influence of…
The effect of improved dielectric properties in the presence of an applied magnetic field is discussed in Pr doped polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$ complemented by the structural properties down to 50 K and magnetic properties.…
Non-monotonic dependence of anomalous Hall resistivity on temperature and magnetization, including a sign change, was observed in Fe/Gd bilayers. To understand the intriguing observations, we fabricated the Fe/Gd bilayers and single layers…
We revisit the interlayer tunneling theory of high temperature superconductors and formulate it as a mechanism by which the striking systematics of the transition temperature within a given homologous series can be understood. We pay…
We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias…
Recently, magnetic tunnel junctions with perpendicular magnetized electrodes combined with exchange bias films have attracted large interest. In this paper we examine the tunnel magnetoresistance of…
We study interlayer exchange interaction in magnetic tunnel junctions with ferroelectric barrier. We focus on the influence of image forces on the voltage dependence of the interlayer magnetic interaction (magneto-electric effect). The…
We experimentally demonstrate the existence of magnetic coupling between two ferromagnets separated by a thin Pt layer. The coupling remains ferromagnetic regardless of the Pt thickness, and exhibits a significant dependence on temperature.…
We theoretically investigate the temperature-dependent static susceptibility and long-range magnetic coupling of three-dimensional (3D) chiral gapless electron-hole systems (semimetals) with arbitrary band dispersion [i.e., $\varepsilon(k)…
Huge values of high field magnetoresistance have been recently reported in large arrays of CoFe nanoparticles embedded in an organic insulating lattice in the Coulomb blockade regime. An unusual exponential decrease of magnetoresistance…
We consider the conductance of a one-dimensional wire interrupted by a double-barrier structure allowing for a resonant level. Using the electron-electron interaction strength as a small parameter, we are able to build a non-perturbative…
The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that…
We present results on all-MgB2 tunnel junctions, where the tunnel barrier is deposited MgO or native-oxide of base electrode. For the junctions with MgO, the hysteretic I-V curve resembles a conventional underdamped Josephson junction…