Related papers: Temperature dependence of interlayer coupling in p…
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…
The fate of the low-temperature conductance at the charge-neutrality (Dirac) point in a single sheet of graphene is investigated down to 20 mK. As the temperature is lowered, the peak resistivity diverges with a power-law behavior and…
We study the nonequilibrium transport for the asymmetric and negative differential magnon tunneling driven by temperature bias. We demonstrate that the many-body magnon interaction that makes the magnonic spectrum temperature-dependent is…
Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in a…
We study current-induced switching in magnetic tunnel junctions (MTJs) in the presence of a field-like spin-transfer torque and titled pinned-layer magnetization in the high current limit at finite temperature. We consider both the…
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each…
Magnetic tunnel junctions for spin-transfer torque switching were prepared to investigate the dielectric breakdown. The breakdown occurs typically at voltages not much higher than the switching voltages, a bottleneck for the implementation…
The effect of a thermal environment on electron (or hole) transfer through molecular bridges and on the electron conduction properties of such bridges is studied. Our steady state formalism based on an extension of the Redfield theory (D.…
MgO based magnetic tunnel junctions are prepared to investigate the dielectric breakdown of the tunnel barrier. The breakdown is directly visualized by transmission electron microscopy measurements. The broken tunnel junctions are prepared…
Determination of the molecular Kondo temperature $T_K$ poses a challenge in most cases when the experimental temperature cannot be tuned to a sufficient extent. We show how this ambiguity can be resolved if additional control parameters are…
Effects of the inter-layer couplings for the orthogonal dimer system SrCu$_2$(BO$_3$)$_2$ are discussed. The spin-gap $\Delta$ of the three-dimensional model is independent of the inter-layer couplings when they are small. Therefore at low…
The temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In$_x$Ga$_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed…
We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity…
We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements.…
We derive a general result that can be used to evaluate and compare the transconductance of different field-effect mechanisms in molecular transistors, both electrostatic and conformational. The electrostatic component leads to the…
The temperature dependence of a vortex-based nano-oscillator induced by spin transfer torque (STVO) in magnetic tunnel junctions (MTJ) is considered. We obtain emitted signals with large output power and good signal coherence. Due to the…
We have fabricated a spin-polarized tunneling device based on half metallic manganites incorporating $Ba_{2}LaNbO_{6}$ as insulating barrier. An anomalous bias dependence of tunnel magnetoresistance (TMR) has been observed, the first of its…
We present measurements of the magnetoconductance of long and narrow quasi one-dimensional gold wires containing magnetic iron impurities in a temperature range extending from $15 $mK to $4.2 $K. The dephasing rate extracted from the weak…
We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber at temperature of 400C reduces the characteristic 1/f noise in the junctions, in some cases by an order of magnitude. Both ultra high vacuum and high vacuum fabricated…
The LAO/STO interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70\%),…