We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias conductance peaks. Temperature dependence suggests Kondo temperatures \~7K. The peak splitting in magnetic field is consistent with theoretical predictions for g=2, though in many devices the splitting is offset from 2guB by a fixed energy. The Kondo resonances observed here may be due to atomic-scale metallic grains formed during electromigration.
@article{arxiv.cond-mat/0410752,
title = {Kondo Effect in Electromigrated Gold Break Junctions},
author = {A. A. Houck and J. Labaziewicz and E. K. Chan and J. A. Folk and I. L. Chuang},
journal= {arXiv preprint arXiv:cond-mat/0410752},
year = {2015}
}