Modification of the magnetic tunnel junction properties

A. Filatov; A. Pogorelov; Ye. Pogoryelov

Modification of the magnetic tunnel junction properties

Materials Science 2012-10-19 v1

Authors: A. Filatov , A. Pogorelov , Ye. Pogoryelov

Abstract

We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of the first magnetic layer fabrication conditions on the degradation of the MTJ is explained by the interlayer diffusion. Various models of electro-physical processes in MTJ on polycrystalline substrates are discussed. The current-voltage (I-V) characteristics of the fabricated structures are found to exhibit the region with the negative differential resistance, similar to the one in tunneling diodes. We explain this phenomenon by the formation of excitons in the MgO layer modified by impurities. Obtained results will be useful in the development of MRAM devices containing MTJs and tunneling diodes.

Keywords

magnetic tunnel junction Fe/MgO/Fe negative differential resistance interlayer diffusion exciton formation MRAM e-beam evaporation

Cite

@article{arxiv.1210.5096,
  title  = {Modification of the magnetic tunnel junction properties},
  author = {A. Filatov and A. Pogorelov and Ye. Pogoryelov},
  journal= {arXiv preprint arXiv:1210.5096},
  year   = {2012}
}

Comments

14 pages, 4 figures

Related papers

View all related →