Related papers: Transient Nature of Negative Capacitance in Ferroe…
Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility…
The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation…
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate…
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an…
This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a…
Nonequilibrium processes in semiconductors are considered with highly nonuniform initial densities of charge carriers. It is shown that there exist such distributions of charge densities under which the electric current through a sample…
We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of…
The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures…
A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…
High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped…
Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside…
Weyl semimetals are characterized by their bulk Weyl points -- conical band touching points that carry a topological monopole charge -- and Fermi arc states that span between the Weyl points on the surface of the material. Recently,…
Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…
We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the…
In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
Desirably, the world relies on the devices being compact, as they could drive to the increased functionality of integrated circuits at the provided footstep, that is becoming more reliable. To reduce the scalability over the devices,…
This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier…
Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…