Related papers: Transient Nature of Negative Capacitance in Ferroe…
Electric current in semiconductors is considered as a function of time. Nonequilibrium fluctuations of the current are studied for strongly nonuniform samples. It is demonstrated that at special conditions the total electric current through…
In this study, a SPICE model for negative capacitance vertical nanowire field-effect-transistor (NC VNW-FET) based on BSIM-CMG model and Landau-Khalatnikov (LK) equation was presented. Suffering from the limitation of short gate length…
Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory…
Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…
Negative differential conductivity (NDC) is a widely exploited effect in modern electronic components. Here, a proof-of-principle is given for the observation of NDC in a quantum transport device for neutral atoms employing a multi-mode…
In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and…
Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature…
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the…
Electrical measurements of ferroelectric switching kinetics are widely used to probe the dynamics of polarization reversal, yet the influence of the measurement circuit is often underappreciated. In this paper, we show that the interplay…
The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field…
In this work, we analyze the ferroelectric (FE) domain-wall (DW) induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks. Our analysis is based on 2D phase field…
Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model…
The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devices and thus has been of great interest in technology and…
The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically by capacitance-voltage and polarization-voltage…
A comprehensive study of the scaling of negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that the NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm node" that comes two nodes after the industry "3nm node,"…
Capacitance measurements from cyclic voltammetry, galvanostatic chronopotentiometry and calculation of capacitance from imaginary part of impedance are widely used in investigations of supercapacitors. The methods assume the supercapacitor…
Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in…
The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization…