Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors
Abstract
Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrical processes. FE-FETs have dominant contributions from polarization-fluctuation rather than static dipolar disorder prevalent in high k paraelectric dielectric-based FETs. Additionally, photo-excitation measurements in the depletion mode reveal clear features in the FET response at different temperatures, indicative of different transport regimes.
Cite
@article{arxiv.1202.4222,
title = {Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors},
author = {Satyaprasad P. Senanayak and S. Guha and K. S. Narayan},
journal= {arXiv preprint arXiv:1202.4222},
year = {2015}
}
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