High frequency polarization switching of a thin ferroelectric film

J. -G. Caputo; A. I. Maimistov; E. D. Mishina; E. V. Kazantseva; V. M. Mukhortov

doi:10.1103/PhysRevB.82.094113

High frequency polarization switching of a thin ferroelectric film

Materials Science 2015-05-19 v1 Other Condensed Matter

Authors: J. -G. Caputo , A. I. Maimistov , E. D. Mishina , E. V. Kazantseva , V. M. Mukhortov

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Abstract

We consider both experimentally and analytically the transient oscillatory process that arises when a rapid change in voltage is applied to a $Ba_xSr_{1-x}TiO_3$ ferroelectric thin film deposited on an $Mg0$ substrate. High frequency ( $\approx 10^{8} rad/s$ ) polarization oscillations are observed in the ferroelectric sample. These can be understood using a simple field-polarization model. In particular we obtain analytic expressions for the oscillation frequency and the decay time of the polarization fluctuation in terms of the material parameters. These estimations agree well with the experimental results.

Keywords

ferroelectric thin film polarization switching transient oscillation high frequency field-polarization model barium strontium titanate

Cite

@article{arxiv.1006.3635,
  title  = {High frequency polarization switching of a thin ferroelectric film},
  author = {J. -G. Caputo and A. I. Maimistov and E. D. Mishina and E. V. Kazantseva and V. M. Mukhortov},
  journal= {arXiv preprint arXiv:1006.3635},
  year   = {2015}
}

High frequency polarization switching of a thin ferroelectric film

Abstract

Keywords

Cite

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