Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and the polarization dynamics according to Landau-Khalatnikov (LK) equation. These equations are self-consistently solved with the one-dimensional metal-oxide-semiconductor (MOS) structure electrostatics and the drift-diffusion solution for the current in the semiconductor channel. Numerical simulations demonstrate, depending on the ferroelectric (FE) thickness, both regimes of hysteresis switching (relevant for a non-volatile memory) and of higher on-currents and steeper subthreshold slope (SS) with a negligible hysteresis (relevant for logic) via the negative capacitance effect.
@article{arxiv.1706.05464,
title = {A Thermodynamic Perspective of Negative-capacitance Field-effect-transistors},
author = {Sou-Chi Chang and Uygar E. Avci and Dmitri. E. Nikonov and Ian A. Young},
journal= {arXiv preprint arXiv:1706.05464},
year = {2018}
}