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A deep understanding of the correlation between electronic and mechanical degrees of freedom is crucial to the development of quantum devices in a nanoelectromechanical system (NEMS). In this work, we first establish a fully quantum…
We theoretically investigate the effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulator. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic…
Carbon nanotubes (CNTs) have recently attracted attention as materials for flexible thermoelectric devices. To provide theoretical guideline of how defects influence the thermoelectric performance of CNTs, we theoretically studied the…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
Electric field dependent capacitance and dielectric loss in poly(3-hexylthiophene) are measured by precision capacitance bridge. Carrier mobility and density are estimated from fits to current-voltage and capacitance data. The capacitance…
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…
The gate-voltage (VG) dependence of the contact resistance (RC) in graphene field-effect transistors is characterized by the transmission line model. The RC-VG characteristics of Ag, Cu, and Au contacts display a dip around the charge…
The ferroelectric field-effect transistor (Fe-FET) is a three-terminal semiconducting device first introduced in the 1950s. Despite its potential, a significant boost in Fe-FET research occurred about ten years ago with the discovery of…
The concept of a nano-actuator that uses ferroelectric switching to generate enhanced displacements is explored using a phase-field model. The actuator has a ground state in the absence of applied electric field that consists of polarized…
Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their…
Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs,…
In semiconductor electronics, the field-effect refers to the control of electrical conductivity in nanoscale devices, which underpins the field-effect transistor, one of the cornerstones of present-day semiconductor technology. The effect…
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…
Ferroelectrics under suitable electric boundary conditions can present a negative capacitance response, whereby the total voltage drop across the ferroelectric opposes the externally applied bias. When the ferroelectric is in a…
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs…
Low-temperature scanning tunneling microscopy and spectroscopy are employed to investigate electron tunneling from a C60-terminated tip into a Cu(111) surface. Tunneling between a C60 orbital and the Shockley surface states of copper is…
Negative capacitance field-effect transistors (NC-FETs) have attracted wide interest as promising candidates for steep-slope devices, and sub-60 mV/decade switching has been demonstrated in NC-FETs with various device structures and…
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based…
The so-called negative electron compressibility refers to the lowering of the chemical potential of a metallic system when the carrier density increases. This effect has often been invoked in the past to explain the enhancement of the…