Related papers: High Resolution Valley Spectroscopy of Si Quantum …
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…
In this manuscript, the evaluation procedure of transition dipole moment (TDM) is discussed. Semiconducting Cd_{x}Zn_{1-x}Se_{y}S_{1-y} alloyed quantum dots (AQDs) are used as the two level emitting system. The AQDs are then self-assembled…
A qudit ($d$-level quantum systems) has a large Hilbert space and thus can be used to achieve many quantum information and communication tasks. Here, we propose a method to transfer arbitrary $d$-dimensional quantum states (known or…
Double quantum dots (DQDs) have emerged as versatile and efficient absorbing light devices owing to their more multiple adjusting parameters than the single QD's. Using the system-reservoir theory, tunneling effect on the quantum…
A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential.…
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate…
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top…
High-efficiency single-photon detection in the microwave domain is a key enabling technology for quantum sensing, communication, and information processing. However, the extremely low energy of microwave photons (~{\mu}eV) presents a…
Strong electron and spin correlations in a double-quantum-dot (DQD) can give rise to different quantum states. We observe a continuous transition from a Kondo state exhibiting a single-peak Kondo resonance to another exhibiting a double…
Revealing the quantum regime of photovoltaics is crucial to enhancing the internal quantum efficiency of a double quantum dots (DQDs) photocell housed in a cavity. In this study, the performance of a quantum photovoltaic is evaluated based…
We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a…
It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the…
Quantum dots in silicon are promising candidates for implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these…
We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D and quasi-2D approaches typically applied to bulk or planar…
The growing interest in quantum information has enabled the manipulation and readout of microwave photon states with high fidelities. The presently available microwave photon counters, based on superconducting circuits, are limited to…
In the present work the possibility of simultaneous localization of two electrons in $\Delta^{100}$ and $\Delta^{001}$ valleys in ordered structures with Ge/Si(001) quantum dots (QD) was verified experimentally by the electron spin…
A single atom in a cavity is the model system of cavity quantum electrodynamics (CQED). The strong coupling regime between the atom and cavity-confined photon corresponds to the reversible exchange of energy between the two modes, and…
Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…
We show that optically active coupled quantum dots embedded in a superconducting microwave cavity can be used to realize a fast quantum interface between photonic and transmon qubits. Single photon absorption by a coupled quantum dot…
The coupling between $z$ valleys in the conduction band of a Si quantum well arises from phenomena occurring within several atoms from the interface, thus ruling out a theoretical description based on pure effective mass theory. However,…