A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over μm-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved.
@article{arxiv.1902.10145,
title = {Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots},
author = {Matthias C. Löbl and Liang Zhai and Jan-Philipp Jahn and Julian Ritzmann and Yongheng Huo and Andreas D. Wieck and Oliver G. Schmidt and Arne Ludwig and Armando Rastelli and Richard J. Warburton},
journal= {arXiv preprint arXiv:1902.10145},
year = {2019}
}