Resonance Kondo Tunneling through a Double Quantum Dot at Finite Bias
Condensed Matter
2009-11-10 v1
Abstract
It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the renormalization group technique we derive scaling equations and calculate the differential conductance as a function of an auxiliary dc-bias for parallel DQD described by SO(4) symmetry. We analyze the decoherence effects associated with the triplet/singlet relaxation in DQD and discuss the shape of differential conductance line as a function of dc-bias and temperature.
Cite
@article{arxiv.cond-mat/0308619,
title = {Resonance Kondo Tunneling through a Double Quantum Dot at Finite Bias},
author = {M. N. Kiselev and K. Kikoin and L. W. Molenkamp},
journal= {arXiv preprint arXiv:cond-mat/0308619},
year = {2009}
}
Comments
11 pages, 6 eps figures included