Electric Field Induced Kondo Tunneling Through Double Quantum Dot
Strongly Correlated Electrons
2007-05-23 v2 Mesoscale and Nanoscale Physics
Abstract
It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the renormalization group technique we derive scaling equations and calculate the differential conductance as a function of an auxiliary dc-bias for parallel DQD.
Cite
@article{arxiv.cond-mat/0206503,
title = {Electric Field Induced Kondo Tunneling Through Double Quantum Dot},
author = {M. N. Kiselev and K. Kikoin and L. W. Molenkamp},
journal= {arXiv preprint arXiv:cond-mat/0206503},
year = {2007}
}
Comments
4 pages, RevTeX, 4 eps figures included