Related papers: High Resolution Valley Spectroscopy of Si Quantum …
We present the theory and measurement of valley splitting in a quantum point contact (QPC) in a modulation doped Si/SiGe heterostructure. Our measurements are performed on a submicron Schottky-gated device. An effective mass theory is…
The valley splitting of 2D electrons in doubly-gated silicon-on-insulator quantum wells is studied by low temperature transport measurements under magnetic fields. At the buried thermal-oxide SiO$_{2}$ interface, the valley splitting…
Both quantum transport measurements in the Pauli blockade regime and microwave cavity transmission measurements are important tools for spin-qubit readout and characterization. Based on a generalized input-output theory we derive a…
A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the…
We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential…
Undoped Si-SiGe two-dimensional electron gas (2DEG) provide an ideal platform for hosting quantum-dot spin-qubits owing enhanced spin dephasing times and compatibility with standard CMOS technology. The strained Si quantum well reduces the…
Strongly driving a two-level quantum system with light leads to a ladder of Floquet states separated by the photon energy. Nanoscale quantum devices allow the interplay of confined electrons, phonons, and photons to be studied under strong…
The valley degeneracy in Si qubit devices presents problems for their use in quantum information processing. It is possible to lift this degeneracy by using the Wiggle Well architecture, in which an oscillatory Ge concentration couples the…
We investigate the non-classical states of light that emerge in a microwave resonator coupled to a periodically-driven electron in a nanowire double quantum dot (DQD). Under certain drive configurations, we find that the resonator…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically,…
Motivated by recent interest in implementing circuit quantum electrodynamics with semiconducting quantum dots, we consider a double quantum dot (DQD) capacitively coupled to a superconducting resonator that is driven by the microwave field…
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We…
We examine energy spectra of Si quantum dots embedded into Si_{0.75}Ge_{0.25} buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and…
We perform theoretical calculations to study steady-state electron transport in a double quantum dot, DQD, coupled to a quantized cavity photon field both in resonance and off-resonance regimes considering weak and strong coupling. In the…
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; however, long shuttling trajectories are guaranteed to encounter…
Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…
Recent experimental progress in coupling nanoscale conductors to superconducting microwave cavities has opened up for transport investigations of the deep quantum limit of light-matter interactions, with tunneling electrons strongly coupled…
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface…
We study a generic cavity-QED system where a set of (artificial) two-level dipoles is coupled to the electric field of a single-mode LC resonator. This setup is used to derive a minimal quantum mechanical model for cavity QED, which…