Related papers: High Resolution Valley Spectroscopy of Si Quantum …
We consider a double-quantum-dot (DQD) qubit which contains six electrons instead of the usual one or two. In this spin qubit, quantum information is encoded in a low-lying singlet-triplet space much as in the case of a two-electron DQD…
In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with…
Excitons dominate the optical response of two-dimensional (2D) semiconductors. Strong interactions produce peculiar excitonic complexes, which provide a testing ground for exciton and quantum many-body theories. Here, we report a hitherto…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…
The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal…
Upon photo- or electrical-excitation, colloidal quantum dots (QDs) are often found in multi-carrier states due to multi-photon absorption and photo-charging of the QDs. While many of these multi-carrier states are observed in single-dot…
We investigate the interplay dynamics of a cavity qed system, where the two-level atoms are trapped in a double-well potential, and the cavity mode, with a frequency largely detuned to the atomic level splitting, is driven by a probe laser.…
We report measurements of the Kondo effect in a double quantum dot (DQD), where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage…
The orbital, spin and valley degrees of freedom in silicon quantum dots support many modes of spin qubit operation. However, it is generally challenging to obtain information about the energy level spectrum over large ranges of parameter…
The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically sized…
We compute valley splittings in Si/SiGe superlattices using ab initio density functional theory (DFT). This first-principle approach is expected to provide an excellent description of interfaces, strains, and atomistic disorder without…
We present new results on cavity-photon-assisted electron transport through two lateral quantum dots embedded in a finite quantum wire. The double quantum dot system is weakly connected to two leads and strongly coupled to a single…
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and…
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-photon resonances are observed due to mixing of magnetic…
Microwave cavities with high quality factors enable coherent coupling of distant quantum systems. Virtual photons lead to a transverse exchange interaction between qubits, when they are non-resonant with the cavity but resonant with each…
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique.…
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are…
Motivated by recent experiments on the generation of coherent light in engineered hybrid quantum systems, we investigate gain in a microwave photonic cavity coupled to quantum dot structures, and develop concrete directions for achieving a…
We investigate the quality (Q) factor and the mode dispersion of single-defect nanocavities based on a triangular-lattice GaAs photonic-crystal (PC) membrane, which contain InAs quantum dots (QDs) as a broadband emitter. To obtain a high Q…