Related papers: Can Tunnel Transistors Scale Below 10nm?

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support…

In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers…

Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data…

An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low…

The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a…

We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in the channel. This potential depends on the drain and gate…

In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the concept of equivalent oxide thickness (EOT) is not applicable…

Designing tunneling junctions with abrupt on-off characteristics and high current densities is critical for many different devices including backward diodes and tunneling field effect transistors (TFETs). It is possible to get a sharp, high…

Scanning tunneling spectroscopy (STS) has yielded significant insight on the electronic structure of graphene and other two-dimensional (2D) materials. STS directly measures a fundamental and directly calculable quantity: the single…

An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF…

In this paper, we investigate the impact of T_{ox} and Vth on power performance trade-offs for on-chip caches. We start by examining the optimization of the various components of a single level cache and then extend this to two level cache…

Carbon Nanotube (CNT) is one of the most significant materials for the development of faster and improved performance of nano-scaled transistors. This paper aims at analyzing a trade-off between device performance and device size of CNT…

Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…

Tens of graphene transistors with nanoperforated channels and different channel lengths were fabricated at the wafer scale. The nanoholes have a central diameter of 20 nm and a period of 100 nm, the lengths of the channel being of 1, 2, 4…

We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture…

We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by utilizing a gate recess with length and depth of 200 nm and…

Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs,…

The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel…

Understanding why Transformers perform so well remains challenging due to their non-convex optimization landscape. In this work, we analyze a shallow Transformer with $m$ independent heads trained by projected gradient descent in the kernel…

A method to perform spectrum analysis on low power signals between 0.1 and 10 THz is proposed. It utilizes a nanoscale antiferromagnetic tunnel junction (ATJ) that produces an oscillating tunneling anisotropic magnetoresistance, whose…