Related papers: Can Tunnel Transistors Scale Below 10nm?
Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect transistor (TFET) formed from atomic precision vertical stacks of…
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…
1T1R (1-transistor-1-resistor) memory crossbar arrays represent a promising solution for compute-in-memory matrix-vector multiplication accelerators and embedded or storage-class memory. However, the size and scaling of these arrays are…
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…
To mitigate the ever-worsening Power Wall problem, more and more applications need to expand their power supply to the wide-voltage range including the near-threshold region. However, the read delay distribution of the SRAM cells under the…
Tunneling two level systems affect damping, noise and decoherence in a wide range of devices, including nanoelectromechanical resonators, optomechanical systems, and qubits. Theoretically this interaction is usually described within the…
Van der Waals heterostructures are the ideal material platform for tunnel field effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) due to ideal, dangling bond free…
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…
Finite length of a one channel wire results in crossover from a Tomonaga-Luttinger to Fermi liquid behavior with lowering energy scale. In condition that voltage drop $(V)$ mostly occurs across a tunnel barrier inside the wire we found…
In the present work, we have investigated the performances of p plus minus Al0.3Ga0.7Sb Pocket Implanted L shaped GaSb InAs staggered bandgap SG heterojunction vertical n channel tunnel field effect transistors TFETs of 4 nm thin channel…
The trench gate MOSFET has established itself as the most suitable power device for low to medium power applications by offering the lowest possible ON resistance among all MOS devices. The evolution of the trench gate power MOSFET has been…
Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is…
Noise-induced switching between coexisting metastable states occurs in a wide range of far-from-equilibrium systems including micro-mechanical oscillators, epidemiological and climate change models, and nonlinear electronic transport in…
Large spiking neural networks (SNNs) require ultra-low power and low variability hardware for neuromorphic computing applications. Recently, a band-to-band tunneling-based (BTBT) integrator, enabling sub-kHz operation of neurons with area…
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…
Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable…
In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage,…
Using a combination of analytic arguments and numerical simulations, we determine lower and upper bounds for the energy barriers to the motion of a defect line in a random potential at low temperatures. We study the cases of magnetic flux…
With scaling of Vt sub-threshold leakage power is increasing and expected to become significant part of total power consumption In present work three new configurations of level shifters for low power application in 0.35{\mu}m technology…