Related papers: Can Tunnel Transistors Scale Below 10nm?
In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials like Graphene, Boron Nitride. Theoretical investigation on the…
Low dimensional materials provide the possibility of improved thermoelectric performance due to the additional length scale degree of freedom for engineering their electronic and thermal properties. As a result of suppressed phonon…
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO…
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…
Transistor-level simulation plays a vital role in validating the physical correctness of integrated circuits. However, such simulations are computationally expensive. This paper proposes three novel reduction methods specifically tailored…
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…
The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…
Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transistors can potentially perform electronic switching with lower…
High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that…
Large efforts in improving thermoelectric energy conversion are devoted to energy filtering by nanometer size potential barriers. In this work we perform an analysis and optimization of such barriers for improved energy filtering. We merge…
In high-performance RF transceivers the thrust of has been on lower noise LNAs and high-power high-speed PAs. The performance trade-off has forced many solutions to have the LNA and PA on a separate die compared to the rest of baseband.…
We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and high-frequency performance while significantly reducing…
Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-dimensional graphene field-effect transistors (GFETs) have recently attracted significant attention for potential RF applications. Here, we explore the…
Two dimensional (2D) crystal heterostructures are shown to possess a unique opportunity for novel THz nonlinear devices. In contrast to the oxide tunneling barrier, the uniformity of 2D insulators in the thickness control provides an ideal…
We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide.…
The role of dimensionality on the electronic performance of thermoelectric devices is clarified using the Landauer formalism, which shows that the thermoelectric coefficients are related to the transmission, T(E), and how the conducing…
The length dependence is computed of the resistance of a disordered normal-metal wire attached to a superconductor. The scaling of the transmission eigenvalue distribution with length is obtained exactly in the metallic limit, by a…
Continued improvement of heat control in mesoscopic conductors brings novel tools for probing strongly correlated electron phenomena. Motivated by these advances, we comprehensively study transport due to a temperature bias in a quantum…
In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in the Si1-xGex body with a compositionally graded Si1-xGex…
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angstr\"om-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance…