Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

Jiangjiang J. Gu; Xinwei Wang; Heng Wu; Roy G. Gordon; Peide D. Ye

doi:10.1109/LED.2013.2248114

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

Mesoscale and Nanoscale Physics 2015-06-15 v1

Authors: Jiangjiang J. Gu , Xinwei Wang , Heng Wu , Roy G. Gordon , Peide D. Ye

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5nm) Al2O3 interfacial layer between higher-k and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63mV/dec has been demonstrated at sub-80nm Lch for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors.

Keywords

InGaAs nanowire MOSFETs gate-all-around interface passivation Al2O3 interfacial layer equivalent oxide thickness scaling subthreshold swing low-power transistors

Cite

@article{arxiv.1302.5660,
  title  = {Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs},
  author = {Jiangjiang J. Gu and Xinwei Wang and Heng Wu and Roy G. Gordon and Peide D. Ye},
  journal= {arXiv preprint arXiv:1302.5660},
  year   = {2015}
}

Comments

to appear in IEEE Electron Device Letters (3 pages, 5 figures)

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

Abstract

Keywords

Cite

Comments

Related papers