Related papers: Compensation of radiation damages for SOI pixel de…

We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma fluxes expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of…

A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is…

In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation…

We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented…

We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV.…

Radiation damage to space-based Charge-Coupled Device (CCD) detectors creates defects which result in an increasing Charge Transfer Inefficiency (CTI) that causes spurious image trailing. Most of the trailing can be corrected during…

Charge-Coupled Device (CCD) detectors, widely used to obtain digital imaging, can be damaged by high energy radiation. Degraded images appear blurred, because of an effect known as Charge Transfer Inefficiency (CTI), which trails bright…

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation.…

This work presents the design of BUSARD, an application specific integrated circuit (ASIC) for the detection of ionizing particles. The ASIC is a monolithic active pixel sensor which has been fabricated in a High-Voltage…

Semiconductor pixel detectors offer features for the detection of radiation which are interesting for particle physics detectors as well as for imaging e.g. in biomedical applications (radiography, autoradiography, protein crystallography)…

This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing…

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer…

The problem of time delay in tunneling ionization is revisited. The origin of time delay at the tunnel exit is analysed, underlining the two faces of the concept of the tunnelling time delay: the time delay around the tunnel exit and the…

We developed a beam telescope system comprising five layers of 300-$\mu$m-thick INTPIX4NA monolithic pixel sensors with each pixel size of 17 $\mu$m square. The sensors were fabricated using silicon-on-insulator (SOI) technology. The…

X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a…

Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from…

Charge Transfer Inefficiency (CTI) due to radiation damage above the Earth's atmosphere creates spurious trailing in Hubble Space Telescope (HST) images. Radiation damage also creates unrelated warm pixels - but these happen to be perfect…

Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive choice for current and upcoming astronomical missions. To understand the performance variations of CMOS detectors in space environment, we investigate the total…

A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event…

The Fine Pixel CCD (FPCCD) is one of the candidate sensor technologies for the ILC vertex detector. The vertex detector is located near the interaction point, thus high radiation tolerance is required. Charge transfer efficiency of CCD is…