Related papers: Decrease of heavy-hole exciton mass induced by uni…
We study radiative linewidth of exciton resonance in shallow In$_x$Ga$_{1-x}$As/GaAs single quantum wells as a function of indium concentration in the range $x=0.02...0.10$ and well thickness in the range $L_Z=1...30$ nm using the method of…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in…
We study the evolution of the absorption spectrum of a modulation doped GaAs/AlGaAs semiconductor quantum well with decreasing the carrier density. We find that there is a critical density which marks the transition from a Fermi edge…
A comprehensive experimental investigation of exciton and biexciton recombination in GaAs/AlGaAs quantum wells is presented. Exciton and biexciton recombination times are found to be 16 and 55 ps, respectively. A method of determining the…
Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such…
When the coupling between light and matter becomes comparable to the energy gap between different excited states they hybridize, leading to the appearance of a rich and complex phenomenology which attracted remarkable interest in recent…
Polarization conversion of light reflected from quantum wells governed by both magnetic field and light propagation direction is observed. We demonstrate that the polarization conversion is caused by the magneto-spatial dispersion in…
We show that when following a simple cavity design metric, a quantum well exciton-microcavity photon coupling constant can be larger than the exciton binding energy in GaAs based optical microcavities. Such a very strong coupling…
Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18…
Variations in the width of a quantum well (QW) are known to be a source of broadening of the exciton line. Using low temperature near-field optical microscopy, we have exploited the dependence of exciton energy on well-width to show that in…
Bulk inversion asymmetry (BIA) of III-V and II-VI semiconductor quantum wells is demonstrated by reflection experiments in magnetic field oriented in the structure plane. The linear in the magnetic field contribution to the reflection…
Considering effects of electric field on the low temperature absorption line of quantum well excitons, we show that, for moderate strength of the electric field, the main contribution to the field dependence of the line-width results from…
Spatially indirect excitons in semiconductor quantum wells are relevant to basic research and device applications because they exhibit enhanced tunability, delocalized wave functions, and potentially longer lifetimes relative to direct…
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and…
A transition between the strong (coherent) and weak (incoherent) coupling limits of resonant interaction between quantum well (QW) excitons and bulk photons is analyzed and quantified as a function of the incoherent damping rate caused by…
The groundstate properties of an exciton in a self-assembled quantum disk are calculated in the presence of a perpendicular magnetic field. For sufficient wide and thin dots, the strain field leads to a confinement of the heavy hole within…
We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in…
We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature…
The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a…