We show that when following a simple cavity design metric, a quantum well exciton-microcavity photon coupling constant can be larger than the exciton binding energy in GaAs based optical microcavities. Such a very strong coupling significantly reduces the relative electron-hole motion and makes the polaritons robust against phonon collisions. The corresponding polariton dissociation and saturation boundaries on the phase diagram are much improved, and our calculations suggest the possibility of constructing a room temperature, high power exciton-polariton laser without resorting to wide bandgap semiconductors.
@article{arxiv.1210.0294,
title = {Very strong coupling in GaAs based optical microcavities},
author = {H. Zhang and N. Y. Kim and Y. Yamamoto and N. Na},
journal= {arXiv preprint arXiv:1210.0294},
year = {2018}
}