Microwave-induced resistance oscillations in a back-gated GaAs quantum well

X. Fu; Q. A. Ebner; Q. Shi; M. A. Zudov; Q. Qian; M. J. Manfra

doi:10.1103/PhysRevB.95.235415

Microwave-induced resistance oscillations in a back-gated GaAs quantum well

Mesoscale and Nanoscale Physics 2017-09-01 v1

Authors: X. Fu , Q. A. Ebner , Q. Shi , M. A. Zudov , Q. Qian , M. J. Manfra

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Abstract

We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov- de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.

Keywords

microwave-induced resistance oscillations effective mass GaAs quantum well back-gate electron-electron interactions Shubnikov-de Haas oscillations two-dimensional electron gas

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@article{arxiv.1708.09834,
  title  = {Microwave-induced resistance oscillations in a back-gated GaAs quantum well},
  author = {X. Fu and Q. A. Ebner and Q. Shi and M. A. Zudov and Q. Qian and M. J. Manfra},
  journal= {arXiv preprint arXiv:1708.09834},
  year   = {2017}
}

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4 pages, 4 figures

Microwave-induced resistance oscillations in a back-gated GaAs quantum well

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