We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, Rxy, that correlates with an increase in the diagonal resistance, Rxx, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.
@article{arxiv.cond-mat/0310474,
title = {Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices},
author = {R. G. Mani and V. Narayanamurti and K. von Klitzing and J. H. Smet and W. B. Johnson and V. Umansky},
journal= {arXiv preprint arXiv:cond-mat/0310474},
year = {2009}
}