The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electron system exhibits an oscillatory-magnetoresistance with vanishing resistance in the vicinity of magnetic fields B=[4/(4j+1)]Bf, where Bf=2πfm∗/e, m∗ is an the effective mass, e is the charge, \textit{f} is the microwave frequency, and j =1,2,3... Here, we report transport with well-resolved Landau levels, and some transmission characteristics.
@article{arxiv.cond-mat/0501091,
title = {Radiation-induced zero-resistance states with resolved Landau levels},
author = {R. G. Mani},
journal= {arXiv preprint arXiv:cond-mat/0501091},
year = {2009}
}