Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.
@article{arxiv.1007.1393,
title = {Microwave zero-resistance states in a bilayer electron system},
author = {S. Wiedmann and G. M. Gusev and O. E. Raichev and A. K. Bakarov and J. C. Portal},
journal= {arXiv preprint arXiv:1007.1393},
year = {2010}
}