Related papers: Decrease of heavy-hole exciton mass induced by uni…
We observed a slow relaxation of magnetoresistance in response to applied magnetic field in selectively doped p-GaAs-AlGaAs structures with partially filled upper Hubbard band. We have paid a special attention to exclude the effects related…
Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a…
A variational calculation of the ground state energy of a biexciton in a GaAs/AlGaAs quantum well is presented. The well width fluctuations leading to trapping of the biexcitons are modeled by a parabolic potential. The results obtained for…
We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. Surprisingly, the effective mass, obtained from the period of microwave-induced resistance…
We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under…
The exciton spin dynamics are investigated both experimentally and theoretically in two-monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and a type-II band alignment. The magnetic-field-induced circular polarization of…
In-plane magnetic field is found to change drastically the photoluminescence spectra and kinetics of interwell excitons in GaAs/AlGaAs coupled quantum wells. The effect is due to the in-plane magnetic field induced displacement of the…
We report the first terahertz study of the intra-excitonic 1s-2p transition at high excitation densities in GaAs/AlGaAs quantum wells. A strong shift, broadening, and ultimately the disappearance of this resonance occurs with increasing…
By monitoring changes in excitonic photoluminescence (PL) that are induced by terahertz (THz) radiation, we observe resonant THz absorption by magnetoexcitons in GaAs/AlGaAs quantum wells. Changes in the PL spectrum are explored as a…
We have shown experimentally that an electric field decreases the energy separation between the two components of a dense spin-polarized exciton gas in a coupled double quantum well, from a maximum splitting of $\sim 4$ meV to zero, at a…
We show that an electric field parallel to the wavefronts of an electron-hole grating in a GaAs quantum well generates, via the electronic spin Hall effect, a spin grating of the same wave vector and with an amplitude that can exceed 1% of…
We study properties of polarons and excitons confined to a potential generated in a planar semiconductor heterostructure of the $Ga_{1-x}Al_{x}As/GaAs/Ga_{1-x}Al_{x}As$ type. In contrast with results of other authors peaks are found for the…
The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged…
Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells was observed by measuring the spatially resolved circular polarization of exciton emission. Exciton spin transport over several microns originates from a long spin…
We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the…
Polariton lasing is a promising phenomenon with potential applications in next-generation lasers that operate without the need for population inversion. Applying a perpendicular magnetic field to a quantum well (QW) significantly alters the…
Avoided crossing of the emission lines of a nearly free positive trion and a cyclotron replica of an exciton bound to an interface acceptor has been observed in the magneto-photoluminescence spectra of p-doped GaAs quantum wells.…
We report a photoluminescence study of electron-hole complexes in specially designed semiconductor heterostructures. Placing a remote dilute layer of donors at different distances \itshape d \normalfont from the quantum well leads to the…
We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature…
A theory of spin fluctuations of excitons in quantum wells in the presence of non-resonant excitation has been developed. Both bright and dark excitonic states have been taken into account. The effect of a magnetic field applied in a…