Related papers: Decrease of heavy-hole exciton mass induced by uni…
We report active tuning of the polariton resonance of quantum well excitons in a semiconductor microcavity using applied stress. Starting with the quantum well exciton energy higher than the cavity photon mode, we use stress to reduce the…
We have observed photoinduced negative optical conductivity, or gain, in the terahertz frequency range in a GaAs multiple-quantum-well structure in a strong perpendicular magnetic field at low temperatures. The gain is narrow-band: it…
The collective charge-excitation spectrum of a double quantum well system in a strong magnetic field is obtained within the random phase approximation. Correction to the spectrum coming from the finiteness of the magnetic field is…
Although energy level repulsion is typically observed in interacting quantum systems, non-Hermitian physics predicts the effect of level attraction, which occurs when significant energy dissipation is present. Here, we show a manifestation…
At low temperatures, indirect excitons formed at the in-plane electron-hole interface in a coupled quantum well structure undergo a spontaneous transition into a spatially modulated state. We report on the control of the instability…
By combining an atomistic pseudopotential method with the configuration interaction approach, we predict the pressure dependence of the binding energies of neutral and charged excitons: $X^0$ (neutral monoexciton), $X^{-}$ and $X^{+}$…
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched…
We study the dynamical dielectric function of a two-dimensional hole gas, exemplified on [001]-GaAs and InAs quantum wells, within the Luttinger model extended to the two lowest subbands including bulk and structure inversion asymmetric…
We review some of the newest findings on the spin dynamics of carriers and excitons in GaAs/GaAlAs quantum wells. In intrinsic wells, where the optical properties are dominated by excitonic effects, we show that exciton-exciton interaction…
We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…
We study the coherent light-matter interactions of GaAs quantum wells associated with excitons, biexcitons and many-body effects. For most polarization configurations, excitonic features dominate the phase-resolved two-dimensional…
The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number…
We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free…
We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under…
We have theoretically studied exciton states and photoluminescence spectra of strained wurtzite AlGaN/GaN quantum-well heterostructures. The electron and hole energy spectra are obtained by numerically solving the Schr\"odinger equation,…
It is well known that electrically neutral excitons can still be affected by crossed electric and magnetic fields that make them move in a direction perpendicular to both fields. We show that a similar effect appears in the absence of…
The photoluminescence (PL) and PL excitation (PLE) spectra of CdTe/ZnTe asymmetric double quantum well (QW) structures are studied on a series of samples containing two CdTe layers with nominal thicknesses of 2 and 4 monolayers (ML) in the…
In order to explain and model the inner ring in photoluminescence (PL) patterns of indirect excitons in GaAs/AlGaAs quantum wells (QWs), we develop a microscopic approach formulated in terms of coupled nonlinear equations for the diffusion,…
We investigate the semiclassical limit and quantum corrections to the metric in a unitary quantum gravity formulation of the CGHS 2d dilaton gravity model. A new method for calculating the back-reaction effects has been introduced, as an…
The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schroedinger equation. The precise results for the…