Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

Thomas Belhadj; Thierry Amand; Alejandro Kunold; Claire-Marie Simon; T. Kuroda; M. Abbarchi; T. Mano; K. Sakoda; Sergej Kunz; Xavier Marie; Bernhard Urbaszek

doi:10.1063/1.3473824

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

Mesoscale and Nanoscale Physics 2010-09-21 v1

Authors: Thomas Belhadj , Thierry Amand , Alejandro Kunold , Claire-Marie Simon , T. Kuroda , M. Abbarchi , T. Mano , K. Sakoda , Sergej Kunz , Xavier Marie , Bernhard Urbaszek

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Abstract

We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k $\cdot$ p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.

Keywords

heavy hole-light hole mixing GaAs quantum dots optical selection rules droplet epitaxy k·p theory exciton emission

Cite

@article{arxiv.1006.0347,
  title  = {Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots},
  author = {Thomas Belhadj and Thierry Amand and Alejandro Kunold and Claire-Marie Simon and T. Kuroda and M. Abbarchi and T. Mano and K. Sakoda and Sergej Kunz and Xavier Marie and Bernhard Urbaszek},
  journal= {arXiv preprint arXiv:1006.0347},
  year   = {2010}
}

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4 pages, 2 figures

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

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