English
Related papers

Related papers: Probing limits of STM field emission patterned Si:…

200 papers

The rapid growth of artificial intelligence (AI) and other data center applications is driving the demand for photonic interconnects that combine high-speed with low energy consumption, making scalability a critical requirement.…

To efficiently align the creation of defect center with photonics structure in nanoscale precision is one of the outstanding challenges for realizing high-performance photonic devices and the application in quantum technology such as…

Applied Physics · Physics 2022-03-18 Mengqi Wang , Haoyu Sun , Xiangyu Ye , Pei Yu , Hangyu Liu , Jingwei Zhou , Pengfei Wang , Fazhan Shi , Ya Wang , Jiangfeng Du

A comprehensive theory is presented for the voltage, temperature, and spatial dependence of the tunneling current between a scanning tunneling microscope (STM) tip and a metallic surface with an individual magnetic adatom. Modeling the…

Strongly Correlated Electrons · Physics 2009-10-31 Avraham Schiller , Selman Hershfield

Scattering scanning near-field optical microscopy (s-SNOM) is a powerful technique for mid-infrared spectroscopy at nanometer length scales. By investigating objects in aqueous environments through ultrathin membranes, s-SNOM has recently…

Simulations of metal nanopatterns embedded in a thin photovoltaic absorber show significantly enhanced absorbance within the semiconductor, with a more than 300% increase for {\lambda} = 800 nm. Integrating with AM1.5 solar irradiation,…

Mesoscale and Nanoscale Physics · Physics 2012-08-23 Fan Ye , Michael J. Burns , Michael J. Naughton

We present the design, implementation, and illustrative results of a light collection/injection strategy based on an off-axis parabolic mirror collector for a low-temperature Scanning Tunneling Microscope (STM). This device allows us to…

The electronic properties of graphene can be modified by the local interaction with a selected metal substrate. To probe this effect, Scanning Tunneling Microscopy is widely employed, particularly by means of local measurement via lock-in…

Mesoscale and Nanoscale Physics · Physics 2023-05-01 Virginia Carnevali , Alessandro Sala , Pietro Biasin , Mirco Panighel , Giovanni Comelli , Maria Peressi , Cristina Africh

In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the segregation/diffusion of dopant atoms during silicon…

In the first three years since the discovery of Fe-based high Tc superconductors, scanning tunneling microscopy (STM) and spectroscopy have shed light on three important questions. First, STM has demonstrated the complexity of the pairing…

Superconductivity · Physics 2015-03-19 Jennifer E. Hoffman

To meet changing research demands, new scanning tunneling microscope (STM) features must constantly evolve. We describe the design, development, and performance of a modular plugin STM which is compact and stable. The STM head is equipped…

Mesoscale and Nanoscale Physics · Physics 2024-03-05 Angela M. Coe , Guohong Li , Eva Y. Andrei

The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous…

Nanofabrication of topological insulator (TI) devices is essential for accessing edge and interface states, but conventional lithography and etching compromise the atomically clean surfaces required for scanning tunneling microscopy and…

Materials Science · Physics 2025-09-24 Adrian Greichgauer , Roozbeh Yazdanpanah , Alexey Taskin , Oliver Breunig , Yoichi Ando , Jens Brede

We have observed an aggregation of carbon or carbon derivatives on platinum and natively oxidized silicon surfaces during STM measurements in ultra-high vacuum on solvent-cleaned samples previously structured by e-beam lithography. We have…

Mesoscale and Nanoscale Physics · Physics 2012-08-28 Dominik Stöffler , Hilbert von Löhneysen , Regina Hoffmann

Qubit information processors are increasing in footprint but currently rely on e-beam lithography for patterning the required Josephson junctions (JJs). Advanced optical lithography is an alternative patterning method, and we report on the…

Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is…

Time resolution is one of the most severe limitations of scanning probe microscopies (SPMs), since the typical image acquisition times are in the order of several seconds or even few minutes. As a consequence, the characterization of…

The sharp increase in resistivity of copper interconnects at ultra-scaled dimensions threatens the continued miniaturization of integrated circuits. Topological semimetals (TSMs) with gapless surface states (Fermi arcs) provide conduction…

Mesoscale and Nanoscale Physics · Physics 2026-02-27 Alexander C. Tyner , William Rogers , Po-Hsin Shih , Yi-Hsin Tu , Gengchiau Liang , Hsin Lin , Ching-Tzu Chen , James M. Rondinelli

Colloidal lithography [1] is how patterns are reproduced in a variety of natural systems and is used more and more as an efficient fabrication tool in bio-, opto-, and nano-technology. Nanoparticles in the colloid are made to form a mask on…

Mesoscale and Nanoscale Physics · Physics 2013-11-27 A. Iovan , M. Fischer , R. Lo Conte , V. Korenivski

We propose a new method for atomic-scale imaging of spatial current patterns in nanoscopic quantum networks by using scanning tunneling microscopy (STM). By measuring the current flowing from the STM tip into one of the leads attached to…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 Tankut Can , Dirk K. Morr

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…