Related papers: Probing limits of STM field emission patterned Si:…
We describe a fully ultra-high vacuum compatible scanning tunneling microscope (STM) optimized for radio-frequency signals. It includes in-situ exchangeable tips adapted to high frequency cabling and a standard sample holder, which offer…
Direct nanoimprinting provides a simple and high-throughput route for producing uniform nanopatterns at great precision and at low costs. However, applying this technique to crystalline metals has been considered as impossible due to…
Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the functionality of semiconductor heterostructures or battery…
The Si(111)7x7 surface was observed by reflection electron microscopy (REM) and scanning tunneling microscopy (STM) simultaneously in an ultra-high vacuum electron microscope. The distance between the STM tip and the Si surface was detected…
The invention of scanning tunneling microscope (STM) dates back to the work of Binnig and Rohrer in the early 1980s, whose seminal contribution was rewarded by the 1986 Nobel Prize in Physics for the design of the scanning tunneling…
Scanning tunneling microscope (STM) has presented a revolutionary methodology to the nanoscience and nanotechnology. It enables imaging the topography of surfaces, mapping the distribution of electronic density of states, and manipulating…
Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on…
The plasmonic tip of a scanning tunnelling microscope (STM) is functionalized with a single fluorescent molecule and is scanned on a plasmonic substrate. The tunneling current flowing through the tip-molecule-substrate junction generates a…
The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative…
A microscopic theory of the transport in a scanning tunnelling microscope (STM) set-up is introduced for \pi-conjugated molecules on insulating films, based on the density matrix formalism. A key role is played in the theory by the energy…
We demonstrate a simple capacitive based method to quickly and efficiently locate micron size conductive samples on insulating substrates in a scanning tunneling microscope (STM). By using edge recognition the method is designed to locate…
Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum computation, and data storage all rely on a well-developed…
We present a probe-type scanning tunneling microscope (STM) with atomic resolution that is designed to be directly inserted and work in a harsh vibrational cryogen-free superconducting magnet system. When a commercial variable temperature…
A multiple-tip ultra-high vacuum (UHV) scanning tunneling microscope (MT-STM) with a scanning electron microscope (SEM) for imaging and molecular-beam epitaxy growth capabilities has been developed. This instrument (nanoworkbench) is used…
Fast switching (< 10 nsec) measurement results on the recently developed BST(M) (barium strontium titanium oxide composition with magnesium-based additions) ferroelectric materials are presented. These materials can be used as the basis for…
Phonon-assisted tunneling plays a crucial role for electronic device performance and even more so with future size down-scaling. We show how one can include this effect in large-scale first-principles calculations using a single "special…
We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning…
The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…
A spectroscopic imaging-scanning tunneling microscope (SI-STM) allows the atomic scale visualization of surface electronic and magnetic structure of novel quantum materials with high energy resolution. To achieve the optimal performance,…