We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.
@article{arxiv.1708.05411,
title = {All-optical lithography process for contacting atomically-precise devices},
author = {Daniel R. Ward and Michael T. Marshall and DeAnna M. Campbell and Tzu-Ming Lu and Justin C. Koepke and David A. Scrymgeour and Ezra Bussmann and Shashank Misra},
journal= {arXiv preprint arXiv:1708.05411},
year = {2017}
}