Related papers: Probing limits of STM field emission patterned Si:…

We consider a scanning tunneling microscope (STM) such that tunneling occurs through two atomically sharp protrusions on its tip. When the two protrusions are separated by at least several atomic spacings, the differential conductance of…

We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the cross-over from ballistic to diffusive…

InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated…

We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM…

Fabrication techniques such as laser patterning offer excellent potential for low cost and large area device fabrication. Conductive polymers can be used to replace expensive metallic inks such as silver and gold nanoparticles for printing…

The physical properties of ultrathin NaCl overlayers on the stepped Cu(311) surface have been characterized using scanning tunneling microscopy (STM) and spectroscopy, and density functional calculations. Simulations of STM images and…

We describe a scanning tunneling microscope (STM) that operates at magnetic fields up to 22 Tesla and temperatures down to 80 mK. We discuss the design of the STM head, with an improved coarse approach, the vibration isolation system, and…

Lightwave-driven scanning tunnelling microscopy (STM) at near-IR frequencies promises an unprecedented combination of atomic spatial resolution and temporal resolution approaching the attosecond range. To achieve this goal, high-sensitivity…

We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The…

Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm…

The junction of a scanning tunneling microscope (STM) operating in the tunneling regime was irradiated with femtosecond laser pulses. A photo-excited hot electron in the STM tip resonantly tunnels into an excited state of a single molecule…

A transimpedance amplifier has been designed for scanning tunneling microscopy (STM). The amplifier features low noise (limited by the Johnson noise of the 1 G{\Omega} feedback resistor at low input current and low frequencies), sufficient…

Nanofabrication research pursues the miniaturization of patterned feature size. In the current state of the art, micron scale areas can be patterned with features down to ~ 30 nm pitch using electron beam lithography. Our work demonstrates…

We report STM-induced desorption of H from Si(100)-H(2$\times1$) at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at -7 V. The desorption is explained by vibrational…

We report on the status and development of polarization-sensitive detectors for millimeter-wave applications. The detectors are fabricated on single-crystal silicon, which functions as a low-loss dielectric substrate for the microwave…

Understanding the nanoscale carrier dynamics induced by light excitation is the key to unlocking futuristic devices and innovative functionalities in advanced materials. Optical pump-probe scanning tunneling microscopy (OPP-STM) has opened…

In a Scanning Tunneling Microscope (STM), when a tunneling electron treated as a point charge enters the barrier region between the tip and the sample, it induces image charges on the conducting surfaces, which modifies the shape of the…

In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with…

Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus…

Conducting submicron particles are well-suited as filler particles in non-conducting polymer matrices to obtain a conducting composite with a low percolation threshold. Going to nanometer-sized filler particles imposes a restriction to the…