We report STM-induced desorption of H from Si(100)-H(2×1) at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at -7 V. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H 5σ hole resonance. The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at -7 V is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.
@article{arxiv.cond-mat/9802304,
title = {STM induced hydrogen desorption via a hole resonance},
author = {K. Stokbro and C. Thirstrup and M. Sakurai and U. Quaade and Ben Yu-Kuang Hu and F. Perez-Murano and F. Grey},
journal= {arXiv preprint arXiv:cond-mat/9802304},
year = {2016}
}