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Related papers: Tunable charge-trap memory based on few-layer MoS2

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Since the discovery of graphene, two-dimensional (2D) materials have paved a new routine for designing high-performance nanoelectronic devices. To facilitate the device applications, there are three key requirements for a material: sizeable…

Materials Science · Physics 2018-04-23 Zhao Liu , Haidi Wang , Jiuyu Sun , Z. F. Wang , Jinlong Yang

Hybrid systems of two-dimensional (2D) materials (such as graphene-family materials and 2D transition metal dichalcogenides) are attracting much attention due to their distinctive optoelectronic, thermal, mechanical, and chemical…

Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…

Applied Physics · Physics 2019-10-02 Nan Fang , Kosuke Nagashio

The end of conventional Dennard scaling and the widening gap between memory bandwidth and arithmetic throughput have made the von Neumann partition a structural bottleneck rather than a transient one. Two-dimensional (2D) materials, with…

Hardware Architecture · Computer Science 2026-05-12 Yaser Banad

Layered transition metal dichalcogenides (TMDs) are commonly classified as quasi-two-dimensional materials, meaning that their electronic structure closely resembles that of an individual layer, which results in resistivity anisotropies…

Two-dimensional transition metal dichalcogenides (TMD) offer a unique platform for creating van-der-Waals heterojunctions with fascinating physical properties and promising applications in optoelectronics and valleytronics. Because of their…

Materials Science · Physics 2023-05-09 J. E. Zimmermann , M. Axt , F. Mooshammer , P. Nagler , C. Schüller , T. Korn , U. Höfer , G. Mette

The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS2 ultra thin quantum well based double barrier resonant tunneling device (RTD) architecture well compatible with conventional CMOS fabrication…

Mesoscale and Nanoscale Physics · Physics 2026-05-05 Abir Mukherjee , Kajal Sharma , Ajit K Katiyar , Saranya Das , Samit K Ray , Samaresh Das

Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…

The non-Markov processes widely exist in thermodymanic processes, while it usually requires packing of many transistors and memories with great system complexity in traditional device architecture to minic such functions. Two-dimensional…

Applied Physics · Physics 2021-08-31 Rongjie Zhang , Wenjun Chen , Changjiu Teng , Wugang Liao , Bilu Liu , Hui-Ming Cheng

Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive…

Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to…

Atomically thin layered materials such as graphene and transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their high carrier-transporting properties and strong light-matter…

Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…

Emerging Technologies · Computer Science 2015-09-11 Gina C. Adam , Brian D. Hoskins , Mirko Prezioso , Dmitri B. Strukov

We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed…

Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however…

We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as…

Two-Dimensional (2D) transition metal dichalcogenides (TMDs) have been the subject of extensive attention thanks to their unique properties and atomically thin structure. Because of its unprecedented room-temperature magnetic properties,…

Materials Science · Physics 2024-12-10 Elham Easy , Mengqi Fang , Mingxing Li , Eui-Hyeok Yang , Xian Zhang

Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically-thin limit. Here we introduce a facile growth mechanism for semimetallic WTe2 crystals, then fabricate few-layer test structures while…

Materials Science · Physics 2016-08-04 Michal J. Mleczko , Runjie , Xu , Kye Okabe , Hsueh-Hui Kuo , Ian R. Fisher , H. -S. Philip Wong , Yoshio Nishi , Eric Pop

Electric capacitors are commonly used in electronic circuits for short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately,…

Mesoscale and Nanoscale Physics · Physics 2020-11-25 A. Bezryadin , A. Belkin , E. Ilin , M. Pak , Eugene V. Colla , A. Hubler

Applications like high density information storage, neuromorphic computing, nanophotonics, etc. require ultra-thin electronic devices which can be controlled with applied electric field. Of late, atomically thin two-dimensional (2D)…

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