Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on selecting the optimal substrate. Here, we report a pronounced memory effect in a MoSe2/clinochlore device, evidenced by electric hysteresis in the intensity and energy of MoSe2 monolayer emissions. This demonstrates both population-driven and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that clinochlore layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternative insulators in fabricating van der Waals heterostructures.
@article{arxiv.2410.07042,
title = {Optical memory in a MoSe$_2$/Clinochlore device},
author = {Alessandra Ames and Frederico B. Sousa and Gabriel A. D. Souza and Raphaela de Oliveira and Igor R. F. Silva and Gabriel L. Rodrigues and Kenji Watanabe and Takashi Taniguchi and Gilmar E. Marques and Ingrid D. Barcelos and Alisson R. Cadore and Victor López-Richard and Marcio D. Teodoro},
journal= {arXiv preprint arXiv:2410.07042},
year = {2024}
}